Semiconductor device

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United States of America Patent

PATENT NO 6417545
SERIAL NO

09544598

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Contact holes which reach source/drain regions shared by access transistors and driver transistors are formed in a self-alignment manner with a silicon nitride film for covering gate electrodes. Therefore, contact plugs formed in the contact holes have an L plan shape. As a result, a semiconductor device including an SRAM can be obtained in which the transistor performance of both the access transistors and the driver transistors is improved and the difference in voltage dependence properties between the driver transistors and the load transistors is improved.

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Patent Owner(s)

  • MITSUBISHI DENKI KABUSHIKI KAISHA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Sakaguchi, Sadanori Hyogo, JP 1 5

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