Method and apparatus for observing porous amorphous film, and method and apparatus for forming the same
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United States of America Patent
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Mar 4, 2003
Grant Date -
N/A
app pub date -
Sep 25, 2000
filing date -
Sep 27, 1999
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A reactant gas is introduced into a process chamber under a temperature which is lower than reactive temperature of the reactant gas so that voids in a porous amorphous insulation film on a sample is filled with the introduced reactant gas. And chemical vapor deposition is carried out with heating the porous amorphous insulation film up to a temperature which is higher than the reactive temperature of the reactant gas to form a crystalline thin film on inner surfaces of the voids. Image data representing the porous amorphous insulation film in which the crystalline thin film is formed are generated with using a transmission electron microscope, and the porous amorphous insulation film is observed based on the image data to measure topographical characteristics of the porous amorphous insulation film such as void's size, porosity, etc.
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