Semiconductor device for generating electromagnetic radiation
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United States of America Patent
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Feb 17, 1987
Issued Date -
N/A
app pub date -
Dec 31, 1985
filing date -
Apr 7, 1983
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A semiconductor LED or laser, having an active layer-shaped region composed of a layer structure comprising active layers and barrier layers. The layer structure constitutes a superlattice structure. Both the active layers and the barrier layers consists of either a stoichiometric semiconductor compound or a semi-conductor element. According to the invention, the active layers consist of n monolayers and the barrier layers consist of m monolayers, where 2.ltoreq.n.ltoreq.7, 2.ltoreq.m.ltoreq.7 and n+m.ltoreq.12, in order to obtain an optimum combination of zone-folding effect and quantum well effect. In this manner, superior lasers and LED's for wave-lengths in the visible part of the spectrum can be realized.
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