Method for forming capacitor of semiconductor device
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United States of America Patent
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Jun 6, 2006
Grant Date -
Jun 23, 2005
app pub date -
Jun 30, 2004
filing date -
Dec 19, 2003
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Disclosed is a method for forming a capacitor of a semiconductor device. The method comprises the steps of: forming a nitride film for storage electrode on a semiconductor substrate; forming an oxide film for storage electrode on the nitride film; selectively etching the oxide film and the nitride film to define a storage electrode region; forming a conductive layer for storage electrode on the semiconductor substrate including the storage electrode region; forming a gap-filling nitride film on the semiconductor substrate to fill up the storage electrode region; performing a CMP process using the oxide film as a polishing stop layer to form a storage electrode; and removing the gap-filling nitride film.
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