Widely wavelength tunable integrated semiconductor device and method for widely tuning semiconductor devices
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United States of America Patent
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Apr 27, 2004
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app pub date -
May 16, 2000
filing date -
May 17, 1999
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Abstract
Alternative laser structures, which have potentially the same tuning performance as (S)SG-DBR and GCSR lasers, and a fabrication process which is similar to that of the (S)SG-DBR laser, are presented. The advantage of these structures is that the output power does not pass through a long passive region.
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