Non-volatile memory cell fuse element
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United States of America Patent
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-
Oct 8, 1985
Grant Date -
N/A
app pub date -
Nov 5, 1982
filing date -
Nov 5, 1982
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A non-volatile memory cell circuit is used to replace a polysilicon fuse as an enabling element for a redundant row or column of memory cells in a semiconductor memory array. The fuse is divided into read and program sections, allowing a large device to be used for reading and a small device to be used for programming, thus permitting programming of all fuses in a redundant row simultaneously with minimal current consumption. The circuit may be embodied as a five-device or a four-device configuration.
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