Monatomic dopant ion source and method
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United States of America Patent
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Apr 14, 2009
Grant Date -
Apr 5, 2007
app pub date -
Sep 28, 2006
filing date -
Mar 28, 2002
priority date (Note) -
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Abstract
Monotomic dopant ions for ion implantation are supplied from vapour of a species containing plural atoms of the desired dopant. The vapour is fed to a plasma chamber and a plasma produced in the chamber with sufficient energy density to disassociate the vapour species to produce monatomic dopant ions in the plasma for implantation.
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