Stack comprising single-crystal diamond substrate

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United States of America Patent

PATENT NO 11522055
APP PUB NO 20210066078A1
SERIAL NO

16962203

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Abstract

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A stack including at least a semiconductor drift layer stacked on a single-crystal diamond substrate having a coalescence boundary, wherein the coalescence boundary of the single-crystal diamond substrate is a region that exhibits, in a Raman spectrum at a laser excitation wavelength of 785 nm, a full width at half maximum of a peak near 1332 cm−1 due to diamond that is observed to be broader than a full width at half maximum of the peak exhibited by a region different from the coalescence boundary, the coalescence boundary has a width of 200 μm or more, and the semiconductor drift layer is stacked on at least the coalescence boundary.

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Patent Owner(s)

  • JAPAN AS REPRESENTED BY DIRECTOR GENERAL OF NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY MINISTRY OF ECONOMY TRADE AND INDUSTRY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chayahara, Akiyoshi Ikeda, JP 17 84
Kawai, Fumiaki Toyota, JP 3 123
Mokuno, Yoshiaki Ikeda, JP 10 59
Ohmagari, Shinya Ikeda, JP 3 0
Saitoh, Hiroaki Toyota, JP 11 303
Seki, Akinori Toyota, JP 28 215
Tsubouchi, Nobuteru Ikeda, JP 4 13
Umezawa, Hitoshi Ikeda, JP 16 99
Yamada, Hideaki Ikeda, JP 171 1836

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