Sam photodiode with multiplication of a single type of carrier in a periodic multilayer region
Number of patents in Portfolio can not be more than 2000
United States of America
Stats
-
May 3, 2022
Grant Date -
May 28, 2020
app pub date -
Nov 22, 2019
filing date -
Nov 22, 2019
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
An avalanche photodiode including an absorption region, a collection region and a multiplication region between the absorption region and the collection region that performs a carrier multiplication by impact ionisation of a single type of carrier. The multiplication region includes a plurality of multilayer structures where each multilayer structure includes, from the absorption region to the collection region, an acceleration layer having a first energy band gap then a multiplication layer having a second energy band gap. The first energy band gap is greater than the second energy band gap.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully