Apparatus and methods for determining memory cell data states

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United States of America Patent

PATENT NO 11798647
APP PUB NO 20230274786A1
SERIAL NO

17681976

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Abstract

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Apparatus might include an array of memory cells and a controller for access of the array of memory cells. The controller might be configured to cause the apparatus to apply a sense voltage level to a control gate of a memory cell of the array of memory cells, generate N determinations whether the memory cell is deemed to activate or deactivate while applying the sense voltage level, wherein N is an integer value greater than or equal to three, deem the memory cell to have a threshold voltage in a first range of threshold voltages lower than the sense voltage level in response to a majority of the N determinations indicating activation of the memory cell, and deem the memory cell to have a threshold voltage in a second range of threshold voltages higher than the sense voltage level in response to a majority of the N determinations indicating activation of the memory cell.

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Patent Owner(s)

Patent OwnerAddress
MICRON TECHNOLOGY INC8000 SOUTH FEDERAL WAY BOISE ID 83716-9632

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Iwasaki, Tomoko Ogura San Jose, US 50 28
Luo, Ting San Jose, US 109 1036
Miranda, Lawrence Celso San Jose, US 20 4
Ning, Sheyang San Jose, US 25 13
Vu, Luyen San Jose, US 10 25

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