Metal-insulator-metal capacitor structure to increase capacitance density
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United States of America Patent
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Feb 7, 2023
Grant Date -
N/A
app pub date -
May 19, 2021
filing date -
Aug 19, 2019
priority date (Note) -
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Abstract
Various embodiments of the present disclosure are directed towards a capacitor structure comprising a plurality of first conductive layers that are vertically stacked over one another and overlie a substrate. The plurality of first conductive layers respectively contact an adjacent first conductive layer in a first connection region. A plurality of second conductive layers are respectively stacked between adjacent ones of the plurality of first conductive layers. The plurality of second conductive layers respectively contact an adjacent second conductive layer in a second connection region. A dielectric structure separates the plurality of first conductive layers and the plurality of second conductive layers. At least a portion of a lower first conductive layer in the plurality of first conductive layers directly underlies the second connection region.
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