SRAM structure and method

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United States of America Patent

PATENT NO 11749340
APP PUB NO 20220319583A1
SERIAL NO

17843241

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Abstract

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Semiconductor devices and methods are provided. A semiconductor device of the present disclosure includes a bias source, a memory cell array including a first region adjacent to the bias source and a second region away from the bias source, and a conductive line electrically coupled to the bias source, a first memory cell in the first region and a second memory cell in the second region. The first memory cell is characterized by a first alpha ratio and the second memory cell is characterized by a second alpha ratio smaller than the first alpha ratio.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lin, Shih-Hao Hsinchu, TW 130 148
Yang, Chih-Chuan Hsinchu, TW 85 82

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