Integrated circuitry, a memory array comprising strings of memory cells, a method used in forming a conductive via, a method used in forming a memory array comprising strings of memory cells

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United States of America Patent

PATENT NO 11915974
APP PUB NO 20220328349A1
SERIAL NO

17227734

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ATTORNEY / AGENT: (SPONSORED)

Importance

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Abstract

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Integrated circuitry comprises vertical conductive vias individually having a lower portion thereof that is directly against conductor material of islands. The islands comprise multiple different composition materials directly above the conductor material. Apart from the conductive vias, the islands individually comprise at least one of (a), (b), or (c), where: (a): a top material that is of different composition from all material that is vertically between the top material and the conductor material; (b): the top material having its top surface in a vertical cross-section extending laterally-outward beyond two opposing laterally-outermost edges of a top surface of the material that is immediately directly below the top material; and (c): is of different composition from that of an upper portion of the conductor material and including a portion thereof that is elevationally coincident with the conductor material or that is directly against the conductor material. Other embodiments, including methods, are disclosed.

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Patent Owner(s)

  • MICRON TECHNOLOGY INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hopkins, John D Meridian, US 235 644
Luo, Shuangqiang Boise, US 70 61
Scarbrough, Alyssa N Boise, US 52 19

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