Dual dopant source/drain regions and methods of forming same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11935793
APP PUB NO 20210375687A1
SERIAL NO

16887154

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Abstract

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A method includes forming a source/drain region in a semiconductor fin; after forming the source/drain region, implanting first impurities into the source/drain region; and after implanting the first impurities, implanting second impurities into the source/drain region. The first impurities have a lower formation enthalpy than the second impurities. The method further includes after implanting the second impurities, annealing the source/drain region.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Huicheng Tainan, TW 230 855
Chang, Tien-Shun New Taipei, TW 21 29
Lin, Yu-Chang Hsinchu, TW 119 568
Nieh, Chun-Feng Hsinchu, TW 98 1178
Yeo, Yee-Chia Hsinchu, TW 428 6723

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