Semiconductor device with a line and method of fabrication thereof
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United States of America Patent
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-
May 4, 2010
Grant Date -
Jun 21, 2007
app pub date -
Feb 20, 2007
filing date -
Jun 10, 2004
priority date (Note) -
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status (Latency Note)
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Abstract
A semiconductor device includes an interlayer insulation film, an underlying line provided in the interlayer insulation film, a liner film overlying the interlayer insulation film, an interlayer insulation film overlying the liner film. The underlying line has a lower hole and the liner film and the interlayer insulation film have an upper hole communicating with the lower hole, and the lower hole is larger in diameter than the upper hole. The semiconductor device further includes a conductive film provided at an internal wall surface of the lower hole, a barrier metal provided along an internal wall surface of the upper hole, and a Cu film filling the upper and lower holes. The conductive film contains a substance identical to a substance of the barrier metal. A highly reliable semiconductor device can thus be obtained.
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