Plasma processing with radio frequency (RF) source and bias signal waveforms

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United States of America Patent

PATENT NO 11942307
APP PUB NO 20230117812A1
SERIAL NO

17451094

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Abstract

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A method for plasma processing includes: sustaining a plasma in a plasma processing chamber, the plasma processing chamber including a first radio frequency (RF) electrode and a second RF electrode, where sustaining the plasma includes: coupling an RF source signal to the first RF electrode; and coupling a bias signal between the first RF electrode and the second RF electrode, the bias signal having a bipolar DC (B-DC) waveform including a plurality of B-DC pulses, each of the B-DC pulses including: a negative bias duration during which the pulse has negative polarity relative to a reference potential, a positive bias duration during which the pulse has positive polarity relative to the reference potential, and a neutral bias duration during which the pulse has neutral polarity relative to the reference potential.

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Patent Owner(s)

  • TOKYO ELECTRON LIMITED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Zhiying Austin, US 35 289
Han, Yun Albany, US 44 91
Lane, Barton Tokyo, JP 36 149
Ranjan, Alok Austin, US 138 2074
Ventzek, Peter Lowell George Austin, US 18 20

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