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Abstract

A method of writing to a resistive sense memory unit includes applying a first voltage across a resistive sense memory cell and a semiconductor transistor to write a first data state to the resistive sense memory cell. The first voltage forms a first write current for a first time duration through the resistive sense memory cell in a first direction. Then the method includes applying a second voltage across the resistive sense memory cell and the transistor to write a second data state to the resistive sense memory cell. The second voltage forms a second write current for a second duration through the resistive sense memory cell in a second direction. The second direction opposes the first direction, the first voltage has a different value than the second voltage, and the first duration is substantially the same as the second duration.

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