Semiconductor device and method of fabricating the same
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United States of America Patent
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Sep 12, 2006
Issued Date -
N/A
app pub date -
Jun 8, 2004
filing date -
Jul 7, 1999
priority date (Note) -
Expired
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Abstract
A semiconductor device includes a semiconductor substrate which has a major surface and a MOS transistor which has a gate and first and second diffusion regions and which is formed on the major surface. The semiconductor device also includes a laminated structure of a SOG layer, wherein the laminated structure is composed of a base layer and a surface layer formed on the base layer and is formed over the MOS transistor and wherein the surface layer is denser than the base layer.
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