Method of controlling crystallographic orientation in laser-annealed polycrystalline silicon films
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United States of America Patent
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Oct 21, 2003
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Feb 28, 2001
filing date -
Feb 28, 2001
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Abstract
A method is provided to produce thin polycrystalline films having a single predominant crystal orientation. The method is well suited to the production of films for use in production of thin film transistors (TFTs). A layer of amorphous silicon is deposited over a substrate to a thickness suitable for producing a desired crystal orientation. Lateral-seeded excimer laser annealing (LS-ELA) is used to crystallize the amorphous silicon to form a film with a preferred crystal orientation. The crystallized film is then polished to a desired thickness for subsequent processing.
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