Semiconductor device
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United States of America Patent
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-
Dec 25, 2001
Grant Date -
Nov 29, 2001
app pub date -
Dec 28, 1998
filing date -
Aug 6, 1998
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A semiconductor device and manufacturing method are provided in which an increase in contact resistance between a plug and a semiconductor layer and an increase in junction leakage current in a semiconductor layer to which a plug is connected can be prevented and fabrication cost and device area can be reduced. A multi-layer film comprising a metal layer (45), a barrier metal layer (44), a polysilicon layer (43), and a barrier metal layer (42) is patterned by photolithography and etching to form poly-metal bit lines (160) electrically connected to buried layers (43A, 43B) and polysilicon plugs (29).
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