Dual polarization quantum well laser in the 200 to 600 nanometers range
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United States of America Patent
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Oct 27, 1998
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Dec 29, 1995
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Dec 29, 1995
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Abstract
A semiconductor laser source using a strained active layer of an indium gallium aluminum nitride (In.sub.x Ga.sub.1-x-y Al.sub.y N) quaternary alloy to obtain semiconductor laser sources that emit TE or TM polarized light in the wavelength range of 200 to 600 nm.
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