Magnetic tunnel junction and memristor apparatus
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United States of America Patent
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Mar 1, 2011
Grant Date -
May 6, 2010
app pub date -
Feb 9, 2009
filing date -
Oct 31, 2008
priority date (Note) -
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Abstract
A magnetic memory device includes a magnetic tunnel junction having a free magnetic layer having a magnetization orientation that is switchable between a high resistance state magnetization orientation and a low resistance state magnetization orientation and a memristor solid state element electrically coupled to the magnetic tunnel junction. The memristor has a device response that is an integrated voltage versus an integrated current.
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