Semiconductor device
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United States of America Patent
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Aug 17, 2010
Grant Date -
Jan 3, 2008
app pub date -
Jun 25, 2007
filing date -
Jun 30, 2006
priority date (Note) -
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Abstract
A semiconductor device includes a semiconductor substrate of a first conductivity type having a top surface and a bottom surface, a semiconductor layer of a first conductivity type formed on the top surface of the semiconductor substrate, and having an active region and an edge termination region surrounding the active region, a first semiconductor region of a second conductivity type formed in the edge termination region adjacent to an edge of the active region, a second semiconductor region of a second conductivity type buried in the edge termination region in a sheet shape or a mesh shape substantially in parallel with a surface of the semiconductor layer, a first electrode formed on the active region of the semiconductor layer and a part of the first semiconductor region, and a second electrode formed on the bottom surface of the semiconductor substrate.
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