Non-volatile memory saving cell information in a non-volatile memory array

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United States of America Patent

PATENT NO 8638596
APP PUB NO 20130028009A1
SERIAL NO

13189784

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Abstract

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Systems and methods for saving repair cell address information in a non-volatile magnetoresistive random access memory (MRAM) having an array of MRAM cells are disclosed. A memory access circuit is coupled to the MRAM, and is configured to store failed cell address information in the MRAM.

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Patent Owner(s)

  • QUALCOMM INCORPORATED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Jung Pill San Diego, US 166 1984
Kim, Taehyun San Diego, US 201 1139
Rao, Hari M San Diego, US 32 403

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