Vertical semiconductor device and method of fabricating the same
Number of patents in Portfolio can not be more than 2000
United States of America
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Apr 26, 2022
Grant Date -
Dec 17, 2020
app pub date -
Apr 2, 2020
filing date -
Apr 2, 2020
priority date (Note) -
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status (Latency Note)
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Abstract
A vertical semiconductor layer includes a common source semiconductor layer on a substrate, a support layer on the common source semiconductor layer, gates and interlayer insulating layers alternately stacked on the support layer, a channel pattern extending in a first direction perpendicular to an upper surface of the substrate while penetrating the gates and the support layer, a sidewall of the support layer facing the channel pattern being offset relative to sidewalls of the gates facing the channel pattern, and an information storage layer extending between the gates and the channel pattern, the information storage layer extending at least to the sidewall of the support layer facing the channel pattern.
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