Plasma enhanced deposition of semiconductors
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United States of America Patent
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-
Sep 2, 1986
Issued Date -
N/A
app pub date -
Oct 28, 1985
filing date -
May 22, 1981
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Semiconductor thin films are produced using plasma assisted chemical vapor deposition on alkali halide single crystal substrates. Deposition is formed at relatively low temperatures so that sublimation of the substrate is not a problem. The invention process permits at high rate deposition of high quality semiconductors.
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