Integrated structures containing vertically-stacked memory cells

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 11309321
APP PUB NO 20210082937A1
SERIAL NO

17107814

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Abstract

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Some embodiments include an integrated structure having a stack of alternating dielectric levels and conductive levels, and having vertically-stacked memory cells within the conductive levels. An opening extends through the stack. Channel material is within the opening and along the memory cells. At least some of the channel material contains germanium.

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Patent Owner(s)

  • MICRON TECHNOLOGY INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Huang, Guangyu Boise, US 39 197
Koveshnikov, Sergei Boise, US 7 56
Liu, Haitao Boise, US 332 1452
Mouli, Chandra Boise, US 291 3851
Pavlopoulos, Dimitrios Boise, US 20 104

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