Monoatomic and moncrystalline layer of large size, in diamond type carbon, and method for the manufacture of this layer
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United States of America Patent
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Aug 2, 2005
Grant Date -
Feb 17, 2005
app pub date -
Sep 23, 2004
filing date -
Dec 2, 1998
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Expired
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Abstract
Monoatomic and monocrystalline layer of large size, in diamond type carbon, and method for the manufacture of this layer. According to the invention, a monocrystalline substrate (2) is formed in SiC terminated by an atomic plane of carbon according to a reconstruction c(2×2) and at least one annealing is carried out, capable of transforming this atomic plane, which is a plane of dimers C≡C (4) of sp configuration, into a plane of dimers C-C (8) of sp3 configuration. Application to microelectronics, optics, optoelectronics, micromechanics and biomaterials.
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