Semiconductor device and method of manufacturing the same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11557672
APP PUB NO 20210288179A1
SERIAL NO

17337155

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Abstract

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A wide band gap semiconductor device includes a semiconductor layer, a trench formed in the semiconductor layer, first, second, and third regions having particular conductivity types and defining sides of the trench, and a first electrode embedded inside an insulating film in the trench. The second region integrally includes a first portion arranged closer to a first surface of the semiconductor layer than to a bottom surface of the trench, and a second portion projecting from the first portion toward a second surface of the semiconductor layer to a depth below a bottom surface of the trench. The second portion of the second region defines a boundary surface with the third region, the boundary region being at an incline with respect to the first surface of the semiconductor layer.

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Patent Owner(s)

  • ROHM CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Omori, Kengo Kyoto, JP 12 28

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