Semiconductor device and method of manufacture
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United States of America Patent
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Feb 6, 2024
Grant Date -
Dec 2, 2021
app pub date -
Nov 13, 2020
filing date -
May 29, 2020
priority date (Note) -
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status (Latency Note)
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Abstract
A device includes a redistribution structure, including conductive features; dielectric layers; and an internal support within a first dielectric layer of the dielectric layers, wherein the internal support is free of passive and active devices; a first interconnect structure attached to a first side of the redistribution structure; a second interconnect structure attached to the first side of the redistribution structure, wherein the second interconnect structure is laterally adjacent the first interconnect structure, wherein the internal support laterally overlaps both the first interconnect structure and the second interconnect structure.
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