Magnetoresistance sensors with Pt-Mn transverse and longitudinal pinning layers and a decoupling insulation layer
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jun 8, 2004
Grant Date -
Feb 20, 2003
app pub date -
Aug 17, 2001
filing date -
Aug 17, 2001
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A magnetoresistance sensor structure is formed of a magnetoresistance sensor having a transverse biasing stack including a transverse pinning layer made of a transverse-pinning-layer antiferromagnetic material, and a transverse pinned layer structure overlying the transverse pinning layer, a spacer layer overlying the transverse pinned layer structure, a sensing stack overlying the spacer layer, and a decoupling layer overlying the sensing stack. A longitudinal biasing stack overlies the magnetoresistance sensor and includes a longitudinal pinned layer, and a longitudinal pinning layer overlying the longitudinal pinned layer and made of a longitudinal-pinning-layer antiferromagnetic material. The transverse-pinning-layer antiferromagnetic material and the longitudinal-pinning-layer antiferromagnetic material are preferably Pt--Mn or Ni--Mn.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully