Support structure for integrated circuitry

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United States of America Patent

PATENT NO 11177306
APP PUB NO 20200152684A1
SERIAL NO

16742588

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Abstract

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Among other things, one or more support structures for integrated circuitry and techniques for forming such support structures are provided. A support structure comprises one or more trench structures, such as a first trench structure and a second trench structure formed around a periphery of integrated circuitry. In some embodiments, one or more trench structures are formed according to partial substrate etching, such that respective trench structures are formed into a region of a substrate. In some embodiments, one or more trench structures are formed according to discontinued substrate etching, such that respective trench structures comprise one or more trench portions separated by separation regions of the substrate. The support structure mitigates stress energy from reaching the integrated circuitry, and facilitates process-induced charge release from the integrated circuitry.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheng, I-I Tainan, TW 12 30
Cheng, Yun-Wei Taipei, TW 185 511
Chien, Volume Tainan, TW 83 471
Huang, Chih-Mu Tainan, TW 60 206
JangJian, Shiu-Ko Tainan, TW 169 1108
Jeng, Chi-Cherng Tainan, TW 121 547

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