Scribe seal structure and method of manufacture
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United States of America Patent
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Mar 23, 2004
Grant Date -
N/A
app pub date -
Jun 21, 2002
filing date -
Jun 21, 2002
priority date (Note) -
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Abstract
A scribe seal (22) and a method for manufacturing the scribe seal (22) and a semiconductor component including the scribe seal (22). A semiconductor substrate (24) has a major surface (26) and a crack arrest structure (36) formed on the major surface (26). A dielectric material (30) is formed on a portion of the semiconductor substrate (24) adjacent the crack arrest structure (36). A nitride layer (38) is formed on the crack arrest structure (36) and the dielectric material (30). An oxide layer (40) is formed on the nitride layer (38). An opening (42) is formed in the oxide layer (40) and the nitride layer (38) and lands on and exposes a portion of the dielectric material (30). A crack arrest material such as, for example, copper, is formed in the opening (42). A semiconductor device is formed in the semiconductor substrate (24).
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