Methods of forming group III-nitride single crystal piezoelectric thin films using ordered deposition and stress neutral template layers

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United States of America Patent

PATENT NO 11832521
APP PUB NO 20200259070A1
SERIAL NO

16852007

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Abstract

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A method of forming a piezoelectric thin film can include depositing a material on a first surface of a Si substrate to provide a stress neutral template layer. A piezoelectric thin film including a Group III element and nitrogen can be sputtered onto the stress neutral template layer and a second surface of the Si substrate that is opposite the first surface can be processed to remove that Si substrate and the stress neutral template layer to provide a remaining portion of the piezoelectric thin film. A piezoelectric resonator can be formed on the remaining portion of the piezoelectric thin film.

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Patent Owner(s)

  • AKOUSTIS, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Leathersich, Jeffrey M Rochester, US 11 3
Moe, Craig Penfield, US 30 61

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