Semiconductor memory device
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United States of America
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Mar 5, 2024
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app pub date -
Mar 3, 2021
filing date -
Mar 3, 2021
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Abstract
A semiconductor memory device includes a substrate, a memory cell array separated from the substrate, and a plurality of first bonding pad electrodes away from the memory cell array. The substrate includes a plurality of first and second regions arranged alternately. The memory cell array includes a plurality of conductive layers extending across the plurality of first and second regions, a plurality of semiconductor layers disposed in the plurality of first regions, and a plurality of first contacts disposed in the plurality of second regions. When a distance between a center position of the first bonding pad electrode and a center position of the first contact closest to the first bonding pad electrode is defined as a first distance, a difference between a largest first distance and a smallest first distance among a plurality of first distances is 400 nm or less.
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