High capacity sputter-etching apparatus
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United States of America Patent
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May 19, 1981
Grant Date -
N/A
app pub date -
Aug 9, 1979
filing date -
Aug 9, 1979
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A high-throughput apparatus for sputter etching or reactive sputter etching of wafers comprises a large-area electrode centrally disposed within a relatively small-area cylindrical electrode. Wafers to be etched are mounted on the inside surface of the cylindrical electrode. A source of a-c power is capacitively coupled to the cylindrical electrode and the center electrode is grounded. By establishing a suitable plasma within the apparatus, simultaneous anisotropic etching of multiple wafers can be achieved.
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