Method and structure for semiconductor interconnect

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 11232943
APP PUB NO 20200343088A1
SERIAL NO

16735137

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Importance

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Abstract

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A method includes receiving a structure having a substrate, a conductive feature over the substrate, and a dielectric layer over the conductive feature. The method further includes forming a hole in the dielectric layer to expose the conductive feature; forming a first metal-containing layer on sidewalls of the hole; and forming a second metal-containing layer in the hole and surrounded by the first metal-containing layer. The first and the second metal-containing layers include different materials. The method further includes applying a first chemical to recess the dielectric layer, resulting in a top portion of the first and the second metal-containing layers protruding above the dielectric layer; and applying a second chemical having fluorine or chlorine to the top portion of the first metal-containing layer to convert the top portion of the first metal-containing layer into a metal fluoride or a metal chloride.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hsiao, Ru-Shang Hsinchu County, TW 84 335
Tsai, Chun Hsiung Hsinchu County, TW 198 3318
Wann, Clement Hsingjen Carmel, US 290 15280

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