Semiconductor device

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United States of America Patent

PATENT NO 11569351
SERIAL NO

17242460

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Abstract

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A main semiconductor device element has first and second p+-type high-concentration regions that mitigate electric field applied to bottoms of trenches. The first p+-type high-concentration regions are provided separate from p-type base regions, face the bottoms of the trenches in a depth direction, and extend in a linear shape in a first direction that is a same direction in which the trenches extend. Between adjacent trenches of the trenches, the second p+-type high-concentration regions are provided scattered in the first direction, separate from the first p+-type high-concentration regions and the trenches and in contact with the p-type base regions. Between the second p+-type high-concentration regions adjacent to one another in the first direction, n-type current spreading regions or n+-type high-concentration regions having an impurity concentration higher than that of the n-type current spreading regions are provided in contact with the second p+-type high-concentration regions.

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Patent Owner(s)

  • FUJI ELECTRIC CO. LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hoshi, Yasuyuki Matsumoto, JP 73 192

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