Ballistic transport semiconductor device based on nano array and manufacturing method

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United States of America Patent

PATENT NO 11145753
APP PUB NO 20200227541A1
SERIAL NO

16631167

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Abstract

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The present disclosure discloses a ballistic transport semiconductor device based on nano array and a manufacturing method thereof. The ballistic transport semiconductor device based on nano array comprises a conducting substrate, more than one semiconductor nano bump portion is arranged on a first surface of the conducting substrate, a top end of the semiconductor nano bump portion is electrically connected with a first electrode, a second surface of the conducting substrate is electrically connected with a second electrode, the second surface and the first surface are arranged back to back, and the height of the semiconductor nano bump portion is less than or equal to a mean free path of a carrier. The carrier is not influenced by various scattering mechanisms in a transporting procedure by virtue of the existence of ballistic transport characteristics, thereby obtaining a semiconductor device having advantages of lower on resistance, less working power consumption.

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Patent Owner(s)

  • SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO),CHINESE ACADEMY OF SCIENCES

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  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cai, Yong Suzhou, CN 51 389
Chen, Fu Suzhou, CN 107 1362
Tang, Wenxin Suzhou, CN 2 0
Yu, Guohao Suzhou, CN 4 4
Zhang, Baoshun Suzhou, CN 10 9
Zhang, Xiaodong Suzhou, CN 176 2240

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