Semiconductor device
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United States of America Patent
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Oct 24, 2023
Grant Date -
N/A
app pub date -
Nov 1, 2021
filing date -
Nov 4, 2020
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The semiconductor device has the main surface, the semiconductor substrate having the first impurity region formed on the main surface, the first electrode formed on the main surface having the first impurity region, the insulating film formed on the main surface such that surround the first electrode, the second electrode formed on the insulating film such that spaced apart from the first electrode and annularly surround the first electrode, and the semi-insulating film. The first electrode has the outer peripheral edge portion. The semi-insulating film is continuously formed from on the outer peripheral edge portion to on the second electrode. The outer peripheral edge portion includes the first corner portion. The second electrode has the second corner portion facing the first corner portion. The semi-insulating film on the insulating film is removed between the first corner and the second corner portion.
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