Semiconductor device having a spacer structure in a conductive layer and a contact structure in the spacer structure

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United States of America Patent

PATENT NO 11562945
SERIAL NO

17020473

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Abstract

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Embodiments of methods for forming contact structures and semiconductor devices thereof are disclosed. In an example, a semiconductor device includes an insulating layer, a conductive layer over the insulating layer, and a spacer structure in the conductive layer and in contact with the insulating layer. The semiconductor device also includes a first contact structure in the spacer structure and extending vertically through the insulating layer. The first contact structure includes a first contact portion and a second contact portion in contact with each other. An upper surface of the second contact portion is coplanar with an upper surface of the conductive layer.

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Patent Owner(s)

  • YANGTZE MEMORY TECHNOLOGIES CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Wu, Linchun Wuhan, CN 39 18
Xia, Zhiliang Wuhan, CN 213 372
Zhang, Kun Wuhan, CN 296 2669
Zhang, Zhong Wuhan, CN 218 5710
Zhou, Wenxi Wuhan, CN 158 82

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