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United States of America Patent

PATENT NO 7202601
SERIAL NO

11275909

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Abstract

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In order to emit light from the upper side of a substrate, for example, a treatment is required such that a cathode is thinned. Generally, when light produced in a light emitting layer is passed through the electrode, brightness of a light emitting device is decreased. In the light emitting device of the present invention, an anode and a cathode are located so as to produce an electric field in a direction parallel with the surface of a substrate. Thus, light produced in the light emitting layer is emitted from the lower side or the upper side of the substrate without passing through the electrode.

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Patent Owner(s)

Patent OwnerAddress
SEMICONDUCTOR ENERGY LABORATORY CO LTD398 HASE ATSUGI-SHI KANAGAWA-KEN 243-0036

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fukunaga, Takeshi Kanagawa-Ken, JP 231 14819

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