Method of producing smooth titanium nitride films having low resistivity
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United States of America Patent
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Jul 20, 1999
Grant Date -
N/A
app pub date -
Mar 27, 1997
filing date -
Mar 27, 1997
priority date (Note) -
Expired
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Abstract
The resistivity of titanium nitride films is reduced, by about 40% (to less than about 60 .mu. Ohm-cm), for example; and, the film surface roughness is reduced, by about 45% (to less than 6 .ANG.) by using a combination of particular process conditions during deposition of the film by an ion-deposition sputtering process.
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