Method for forming a semiconductor device
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United States of America Patent
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Jun 15, 2010
Grant Date -
Apr 15, 2010
app pub date -
Oct 14, 2008
filing date -
Oct 14, 2008
priority date (Note) -
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Abstract
A method for forming a semiconductor device includes providing a substrate having at least a gate positioned thereon, forming at least a recess in the substrate adjacent to the gate, performing a first selective epitaxial growth (SEG) process to form a first epitaxial layer in the recess, performing an etching process to remove a portion of the first epitaxial layer to expose the substrate, and performing a second SEG process to form a second epitaxial layer on the first epitaxial layer.
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