Manufacturing method of semiconductor devices
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United States of America Patent
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Jul 20, 2004
Grant Date -
Jan 16, 2003
app pub date -
Mar 20, 2002
filing date -
Aug 27, 2001
priority date (Note) -
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Abstract
A semiconductor device is manufactured using a SiC substrate. On a semiconductor region a region formed of SiC having an (11-20) face orientation is formed. A gate insulation layer is a gate oxidation layer. The surface of the semiconductor region is cleaned, and the gate insulation layer is formed in an atmosphere containing hydrogen or water vapor. After the gate insulation layer has been formed, the substrate is heat-treated in an atmosphere containing hydrogen or water vapor. This reduces the interface-trap density at the interface between the gate oxidation layer and the semiconductor region.
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