Semiconductor device and method for manufacturing the same
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United States of America Patent
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Dec 11, 2012
Grant Date -
Mar 3, 2011
app pub date -
Jul 15, 2010
filing date -
Aug 25, 2009
priority date (Note) -
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Abstract
The semiconductor device includes a first interconnect layer insulating film, first copper interconnects that are embedded in the first interconnect layer insulating film, and an interlayer insulating film that is formed on the first copper interconnects and the first interconnect layer insulating film. The semiconductor device includes a second interconnect layer insulating film that is formed on the interlayer insulating film and second copper interconnects that are embedded in the second interconnect layer insulating film. The first and second interconnect layer insulating films include first and second low dielectric constant films, respectively. The interlayer insulating film has higher mechanical strength than the first and second interconnect layer insulating films.
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