Hybrid bonding contact structure of three-dimensional memory device

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United States of America Patent

PATENT NO 11527547
APP PUB NO 20210134826A1
SERIAL NO

17148209

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Abstract

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Embodiments of through array contact structures of a 3D memory device and fabricating method thereof are disclosed. The memory device includes an alternating layer stack disposed on a first substrate. The alternating layer stack includes a first region including an alternating dielectric stack, and a second region including an alternating conductor/dielectric stack. The memory device further comprises a barrier structure including two parallel barrier walls extending vertically through the alternating layer stack and laterally along a word line direction to laterally separate the first region from the second region. The memory device further comprises a plurality of through array contacts in the first region, each through array contact extending vertically through the alternating dielectric stack.

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Patent Owner(s)

  • YANGTZE MEMORY TECHNOLOGIES CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Jun Hubei, CN 843 6030
Cheng, Weihua Hubei, CN 36 147
Lu, Zhenyu Hubei, CN 165 2923
Pan, Feng Hubei, CN 266 3534
Shi, Wenguang Hubei, CN 20 435
Wu, Guanping Hubei, CN 29 413
Yang, Simon Shi-Ning Hubei, CN 24 292
Yang, Steve Weiyi Hubei, CN 22 273

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