Hybrid bonding contact structure of three-dimensional memory device
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United States of America Patent
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Dec 13, 2022
Grant Date -
May 6, 2021
app pub date -
Jan 13, 2021
filing date -
Mar 8, 2017
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Abstract
Embodiments of through array contact structures of a 3D memory device and fabricating method thereof are disclosed. The memory device includes an alternating layer stack disposed on a first substrate. The alternating layer stack includes a first region including an alternating dielectric stack, and a second region including an alternating conductor/dielectric stack. The memory device further comprises a barrier structure including two parallel barrier walls extending vertically through the alternating layer stack and laterally along a word line direction to laterally separate the first region from the second region. The memory device further comprises a plurality of through array contacts in the first region, each through array contact extending vertically through the alternating dielectric stack.
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Patent Owner(s)
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Chen, Jun | Hubei, CN | 843 | 6030 |
Cheng, Weihua | Hubei, CN | 36 | 147 |
Lu, Zhenyu | Hubei, CN | 165 | 2923 |
Pan, Feng | Hubei, CN | 266 | 3534 |
Shi, Wenguang | Hubei, CN | 20 | 435 |
Wu, Guanping | Hubei, CN | 29 | 413 |
Yang, Simon Shi-Ning | Hubei, CN | 24 | 292 |
Yang, Steve Weiyi | Hubei, CN | 22 | 273 |
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