Ferroelectric memory and memory element thereof

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United States of America Patent

PATENT NO 11837270
SERIAL NO

17436777

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Abstract

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A ferroelectric memory is intended to reduce an applied voltage required at the times of writing and reading. A ferroelectric capacitor includes a ferroelectric film and a top electrode and a bottom electrode including materials with different work functions formed above and below the ferroelectric film. The transistor is connected to either the top electrode or the bottom electrode to select the ferroelectric capacitor. A drive control unit applies, at the times of writing and reading, a voltage lower than that at the time of erasing by a predetermined potential difference to the ferroelectric film.

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Patent Owner(s)

Patent OwnerAddress
SONY SEMICONDUCTOR SOLUTIONS CORPORATIONATSUGI-SHI KANAGAWA 243-0014
SONY GROUP CORPORATIONTOKYO 108-0075

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kobayashi, Toshiyuki Tokyo, JP 141 1827
Okuno, Jun Kanagawa, JP 24 133

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