Shallow trench type quadri-cell of phase-change random access memory (PRAM)
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United States of America Patent
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Dec 13, 2011
Grant Date -
Oct 14, 2010
app pub date -
Apr 9, 2009
filing date -
Apr 9, 2009
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Abstract
A method of forming a phase-change random access memory (PRAM) cell and PRAM arrangement, and embodiments of phase-change random access memory (PRAM) cells and PRAM arrangements are disclosed. A phase-change random access memory (PRAM) cell includes a bottom electrode, a heater resistor coupled to the bottom electrode, a phase change material (PCM) coupled to the heater resistor, and a top electrode coupled to the phase change material. An active region between the heater resistor and the phase change material is defined by a thickness of the heater resistor.
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