Semiconductor device, method of fabricating the same, and display device including the same

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United States of America Patent

PATENT NO 11677061
APP PUB NO 20220278262A1
SERIAL NO

17742092

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Abstract

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A semiconductor device includes a substrate including a first region and a second region that are arranged in a first direction that is parallel to an upper surface of the substrate; a separation layer provided on the first region of the substrate; a high electron mobility transistor (HEMT) device overlapping the separation layer in a second direction that is perpendicular to the upper surface of the substrate; a light-emitting device provided on the second region of the substrate; and a first insulating pattern covering a side surface of the HEMT device, wherein the first insulating pattern overlaps the separation layer in the second direction.

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Patent Owner(s)

  • SAMSUNG ELECTRONICS CO. LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Choi, Junhee Seongnam-si, KR 88 135
Han, Joohun Hwaseong-si, KR 36 30
Kong, Kiho Suwon-si, KR 39 76
Park, Jinjoo Yongin-si, KR 48 83

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